| PART |
Description |
Maker |
| MX27C1000A MX27C1000AMC-10 MX27C1000AMC-12 MX27C10 |
1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 90 ns, PQCC32
1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 90 ns, PDIP32
Single Output LDO, 3.0A, Fixed(1.5V), Fast Transient Response, Low Quiescent Current 5-DDPAK/TO-263 -40 to 125
|
Macronix International Co., Ltd.
MCNIX[Macronix International]
|
| IDT71L024L70PZI IDT71L024 IDT71L024L100PZ IDT71L02 |
low power 3v cmos sram 1 meg (128k X 8-bit) 128K X 8 STANDARD SRAM, 100 ns, PDSO32
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| IC62LV1024AL IC62LV1024ALL-45B IC62LV1024ALL-45BI |
70ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
128K x 8 Ultra Low Power and Low VCC SRAM
From old datasheet system
55ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| BS616LV2016DIP55 BS616LV2016ECG55 BS616LV2016ECG70 |
Very Low Power CMOS SRAM 128K X 16 bit
|
Brilliance Semiconductor
Brilliance Semiconducto...
|
| LY62L12816 LY62L12816E LY62L12816GL LY62L12816GV L |
128K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| BS62LV1027 BS62LV1027SCP55 BS62LV1027STC55 BS62LV1 |
Very Low Power CMOS SRAM 128K X 8 bit
|
Brilliance Semiconductor
http://
|
| EM620FU16B EM624FS16AT-10LL EM644FS16AT-10LL EM624 |
128K x16 bit Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
Emerging Memory & Logic...
|
| K6F2016U4D K6F2016U4D-F K6F2016U4D-FF55 K6F2016U4D |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
|
| BS616LV2011 BS616LV2011AC BS616LV2011AI BS616LV201 |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit
|
BSI[Brilliance Semiconductor]
Brilliance Semiconducto...
|
| KM68V1000BLE_LE-L KM68U1000BLE_LE-L KM68U1000BLG-1 |
CONNECTOR ACCESSORY 连接器附
128K X 8bit Low Power and Low Voltage CMOS Statinc RAM 128K的8位低功耗和低电压的CMOS Statinc内存
(KM68V1000B / KM68U1000B) 128K X 8bit Low Power and Low Voltage CMOS Statinc RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| N02L63W3AB25I N02L63W3AB5IT N02L63W3A |
2 Mb Ultra-Low Power Asynchronous CMOS SRAM
2 Mb, 3 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tape and Reel; Qty per Container: 2500 128K X 16 STANDARD SRAM, 70 ns, PBGA48
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 16bit
|
ON Semiconductor
|
